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The PS2562L-1-V-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates an infrared emitting diode with an NPN silicon photodarlington transistor, providing high isolation voltage and current transfer ratio. The device utilizes a lead bending type (Gull-wing) package designed for surface mount applications. Key electrical characteristics include a maximum collector-emitter voltage of 40 V, a maximum collector current of 200 mA, and a typical current transfer ratio of 2000%. It operates within a temperature range of -55°C to +100°C.
Verify the specific suffix 'V' against official Renesas documentation to confirm compliance with relevant safety standards such as BSI or UL approvals. Ensure the surface mount variant matches the target footprint requirements. Confirm RoHS status and manufacturing origin details prior to finalizing procurement orders.
Select this component when high gain is required due to the photodarlington output structure. Consider the slower switching speed compared to standard phototransistors. Verify that the surface mount package aligns with the board layout constraints and thermal management strategies for the intended application environment.
This part belongs to the PS2562L series of high isolation voltage Darlington transistor type photocouplers. It is distinct from through-hole DIP variants and standard phototransistor models like the PS2561 series. The series is designed for robust performance in noisy environments where high CTR and isolation are critical.
Cross-reference with PS2562L-1 for pin compatibility. Verify if PS2562-1 serves as a functional equivalent if through-hole packaging is acceptable.