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The PS2581L2-W-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics Corporation. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a surface-mount package. The device provides high isolation voltage of 5000Vrms with extended creepage and clearance distances exceeding 8 millimeters. Key electrical specifications include a collector-emitter breakdown voltage of 80V, a maximum DC forward current of 80mA, and a typical current transfer ratio ranging from 80% to 400% at 5mA input. The unit supports operation across a temperature range of -55°C to +100°C.
Verify the specific suffix designation against official Renesas documentation to confirm pinout compatibility and package dimensions. Confirm RoHS3 compliance status and moisture sensitivity level prior to procurement. Ensure the selected variant matches the required surface-mount footprint specifications for PCB layout validation.
Select this component when surface-mount technology is required for high-isolation applications. Compare the 80V collector-emitter voltage rating against load requirements. Evaluate the 8mm creepage distance against regulatory safety standards for the target enclosure design. Consider the NPN phototransistor output characteristics for logic interfacing needs.
This part belongs to the PS2581 series of long creepage type high isolation voltage photocouplers. The series includes through-hole DIP variants such as the PS2581L1-A and PS2581L2-A. The W-A suffix specifically denotes the surface-mount Gull-wing package format, distinguishing it from standard dual-in-line packages while maintaining identical internal optoelectronic performance characteristics.
PS2561AL1-1-A-N-P is listed as a parameter equivalent substitute by Renesas. Verify mechanical footprint compatibility and electrical parameter alignment before substitution.