SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PS2801-1-P-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a compact SSOP-4 surface-mount package. The device provides electrical isolation with a rated insulation voltage of 2500 Vrms. Key electrical parameters include a maximum collector-emitter voltage of 80 V, a maximum forward current of 5 mA, and a typical rise time of 3 µs. It operates within a temperature range of -55°C to +100°C.
Verify the specific suffix configuration against official datasheets, as variations exist within the PS2801 family. Confirm component availability status prior to integration, as certain variants may be discontinued or restricted. Ensure compliance with RoHS directives and relevant safety certifications required for the target application environment.
Select this component for applications requiring single-channel isolation in space-constrained designs. The SSOP-4 package supports surface-mount assembly for automated manufacturing. Evaluate the 80 V collector-emitter voltage and 5 mA forward current limits to ensure compatibility with the driving circuit and load requirements.
This part belongs to the PS2801 series of high-isolation voltage photocouplers. The series utilizes plastic SSOP packages available in 4-pin and 16-pin configurations. These devices are designed for high-density applications where small form factors and effective shielding against ambient light are critical for reliable operation.
Cross-reference with PS2801-1-F3-P-A for tape-and-reel packaging variants. Verify functional equivalence with PS2801-1-V-F3-P-A regarding pinout and electrical characteristics before substitution.