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The PS2801C-1-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a compact SSOP-4 package. The device provides high isolation voltage of 2500 Vrms and supports a maximum collector-emitter voltage of 80 V. Key electrical parameters include a forward current of 30 mA, a forward voltage of 1.4 V, and a power dissipation of 60 mW. The current transfer ratio ranges from 50% to 400%, with typical switching times of 5 μs rise and 7 μs fall. It operates within a temperature range of -55°C to +100°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets. Check lifecycle status as the part may be marked Not Recommended for New Designs. Ensure packaging specifications match project requirements before ordering.
Select this component when single-channel isolation with moderate speed is required. Consider the 80 V collector-emitter voltage limit for output stage design. Evaluate thermal management needs given the 60 mW power dissipation rating. Verify that the SSOP-4 footprint aligns with PCB layout constraints.
This component belongs to the PS2801C series of high isolation voltage SSOP photocouplers. The series includes variants such as PS2801C-4 for quad-channel applications. These devices are engineered for cost-effective isolation solutions in space-constrained environments while maintaining safety standards compliance.
Cross-reference with PS2801C-1-F3-A for tape-and-reel packaging options. Verify pinout compatibility and electrical parameter equivalence before substitution.