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The PS2801C-1-F3-L-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a compact SSOP-4 surface-mount package. The device provides high isolation voltage of 2500 Vrms and supports a maximum collector-emitter voltage of 80 V. Key electrical parameters include a forward current of 50 mA, forward voltage of 1.4 V, and power dissipation of 180 mW. The current transfer ratio ranges from 100% to 300%, with typical switching times of 3 µs rise and 5 µs fall. It operates within a temperature range of -55°C to +100°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific safety certifications such as UL, CSA, BSI, or VDE depending on regional requirements. Check for obsolescence notices or limited supply constraints before finalizing procurement plans.
Select this component when a single-channel isolation solution with high voltage withstand capability is required in a small form factor. Ensure the application demands do not exceed the 80 V collector-emitter voltage limit or the 50 mA current ratings. Verify that the operating temperature range aligns with the system's thermal environment.
This part belongs to the PS2801 series of high-isolation voltage photocouplers. The series includes variants with different channel counts and packaging options, such as the PS2801-4 for four-channel applications. The PS2801C-1 variant specifically denotes the single-channel configuration with enhanced insulation characteristics suitable for industrial and commercial equipment.
Direct substitutes may include other single-channel transistor output optocouplers with similar pinouts and electrical ratings. Verify compatibility regarding isolation voltage, current transfer ratio, and package dimensions before substitution.