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The PS2861B-1Y-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a GaAs infrared emitting diode and an NPN silicon phototransistor within a shielded SSOP-4 package. Key electrical parameters include a maximum collector-emitter voltage of 70 V, a forward current of 5 mA, and a forward voltage of 1.1 V. The device supports high isolation with a rated insulation voltage of 3750 Vrms. It features a typical rise time of 4 μs and fall time of 5 μs, with a power dissipation of 180 mW. The unit operates within an ambient temperature range of -55°C to +110°C.
Verify the component status before procurement as it may be marked as Not Recommended for New Designs (NRND). Confirm that the SSOP-4 package and specific suffix align with existing board layouts. Ensure compliance with required safety certifications such as UL or CSA if applicable to the final equipment standards. Check for RoHS compliance documentation.
Select this component when a compact SMD solution is required for DC coupling applications. The 3750 Vrms isolation rating makes it suitable for noisy environments. Consider the 5 mA forward current requirement for input driver design. Verify that the 70 V collector-emitter voltage meets the load requirements. The 110°C operating temperature range supports high-heat industrial applications.
This part belongs to the PS2861B-1 series of photocouplers designed for general-purpose isolation. It is distinct from through-hole DIP variants like the PS2561 series due to its surface-mount SSOP-4 form factor. The series emphasizes high-speed switching and thermal stability for modern electronic designs.
Direct substitutes include other PS2861B-1 variants with different packaging or tape options, such as PS2861B-1-F3. Cross-manufacturer equivalents must match the 3750 Vrms isolation, SSOP-4 package, and NPN output configuration.