PSMN1R0-30YLDX

$1.73

Description：MOSFET N-CH 30V 100A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d7476a5e1a86 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

PSMN1R0-30YLDX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 100A LFPAK56. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN1R0-30YLDX

Description：MOSFET N-CH 30V 100A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.02mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：121.35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8598 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：238W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

Single FETs, MOSFETs datasheet and documents for PSMN1R0-30YLDX

PSMN1R0-30YLDX

Single FETs, MOSFETs Overview

The Nexperia PSMN1R0-30YLDX is an N-channel logic level MOSFET utilizing NextPowerS3 technology in a LFPAK56 (SOT669) package. It features a drain-source voltage of 30 V and a continuous drain current capability of 300 A at Tmb = 25 °C. The typical drain-source on-state resistance is 1.0 mΩ at VGS = 4.5 V and ID = 25 A. Total gate charge is typically 38.2 nC under the same conditions. The device operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

Utilizes unique SchottkyPlus technology for high efficiency and low spiking performance without problematic leakage currents.
Features ultra-low gate charge parameters optimized for system efficiency at higher switching frequencies.
Employs superfast switching with soft-recovery characteristics to minimize electromagnetic interference.
Constructed with clip bonded and solder die attach for high reliability, eliminating glue and wire bonds.

Single FETs, MOSFETs Applications

On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the component status remains active production before finalizing design-in decisions. Cross-reference the marking code 1D030L with physical samples to authenticate the source. Ensure compliance with RoHS directives as stated in the product data sheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling and low conduction losses. The logic level gate drive suitability allows for direct control from standard logic sources. Consider the thermal resistance values when designing PCB layouts for adequate heat dissipation. Verify that the operating voltage and current limits remain within the specified absolute maximum ratings for long-term reliability.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia NextPowerS3 portfolio, which integrates advanced trench MOSFET technology with Schottky-like performance. The LFPAK56 package provides exposed leads for optimal visual solder inspection and wave solderability. It is designed for industrial and communications equipment requiring high power density and efficiency.