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PSMN2R4-30MLD/1X is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PSMN2R4-30MLD/1X
- Description：MOSFET
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for PSMN2R4-30MLD/1X
Single FETs, MOSFETs Overview
The Nexperia PSMN2R4-30MLD/1X is a logic level N-channel enhancement mode MOSFET utilizing NextPowerS3 technology. It features a drain-source voltage of 30 V and an on-state resistance of 2.4 mΩ at VGS=10V. The device supports a continuous drain current of 70 A and total power dissipation of 91 W. Operating within a junction temperature range of -55 °C to 175 °C, it employs SchottkyPlus technology for low leakage. Packaged in LFPAK33 (SOT1210), it offers ultra-low gate charge and superfast switching with soft-recovery characteristics.
Single FETs, MOSFETs Feature Summary
- NextPowerS3 portfolio utilizing unique SchottkyPlus technology delivers high efficiency and low spiking performance without problematic high leakage current.
- Ultra-low gate charge parameters ensure high system efficiency, particularly at higher switching frequencies.
- Superfast switching with soft-recovery characteristics minimizes spiking and ringing for low EMI designs.
- High reliability clip bonded and solder die attach construction in a Mini Power SO8 package qualified to 175 °C.
Single FETs, MOSFETs Applications
- On-board DC-to-DC solutions for server and telecommunications
- Secondary-side synchronous rectification in telecommunication applications
- Voltage regulator modules (VRM)
- Point-of-Load (POL) modules
- Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the LFPAK33 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-mounting base thermal resistance. Validate that the application voltage and current limits remain within the absolute maximum ratings defined in the datasheet.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring logic level gate drive compatibility optimized for 4.5 V operation. The low parasitic inductance and resistance make it suitable for high-frequency switching applications. Consider the exposed leads for optimal visual solder inspection and thermal conduction. Evaluate the soft-recovery body diode characteristics for synchronous rectification requirements.
Single FETs, MOSFETs Part Context
This device belongs to Nexperia's NextPowerS3 portfolio, which integrates Schottky-like performance with standard MOSFET structures. The LFPAK33 package provides a compact surface-mount solution with enhanced thermal capabilities compared to traditional plastic packages. It is designed for industrial and communications equipment operating under demanding conditions.
Single FETs, MOSFETs Replacement Considerations
PSMN2R4-30MLD
Single FETs, MOSFETs FAQ
What technology enables the low leakage current in this MOSFET?
The device utilizes Nexperia’s unique 'SchottkyPlus' technology, which provides Schottky-like performance with less than 1 µA leakage at 25 °C.
Is this product suitable for automotive applications?
No, unless expressly stated otherwise in the data sheet, this product is not automotive qualified and is not tested according to automotive standards.
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