PSMN2R4-30MLD/2X

$0.31

Description：PSMN2R4-30MLD/SOT1210/MLFPAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:1285e96e9781 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN2R4-30MLD/2X is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is PSMN2R4-30MLD/SOT1210/MLFPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN2R4-30MLD/2X

Description：PSMN2R4-30MLD/SOT1210/MLFPAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3264 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：91W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

Single FETs, MOSFETs datasheet and documents for PSMN2R4-30MLD/2X

PSMN2R4-30MLD/2X

Single FETs, MOSFETs Overview

The Nexperia PSMN2R4-30MLD/2X is a logic level N-channel enhancement mode MOSFET utilizing NextPowerS3 technology. It features a LFPAK33 (SOT1210) package with an exposed mounting base connected to the drain. Key electrical parameters include a 30 V drain-source voltage, 70 A continuous drain current at 25 °C case temperature, and a typical RDS(on) of 2.4 mΩ at VGS = 10 V. The device supports junction temperatures up to 175 °C and includes SchottkyPlus body diode characteristics.

Single FETs, MOSFETs Feature Summary

Utilizes unique SchottkyPlus technology for high efficiency and low spiking performance without problematic leakage currents.
Features ultra-low gate charge and superfast switching with soft-recovery for optimized system efficiency.
Constructed with clip bonded and solder die attach in a Mini Power SO8 package without glue or wire bonds.
Includes exposed leads designed for optimal visual solder inspection.

Single FETs, MOSFETs Applications

On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required reel quantity and tape configuration. Confirm that the LFPAK33 package dimensions align with the target PCB footprint. Ensure thermal management designs account for the mounting base connection to the drain terminal as specified in the datasheet thermal resistance data.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring logic level gate drive compatibility and high efficiency at elevated switching frequencies. The NextPowerS3 portfolio offers superior soft-recovery characteristics compared to standard MOSFETs. Consider the 175 °C junction temperature rating for robust operation in demanding thermal environments.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's NextPowerS3 portfolio, which employs TrenchMOS technology within the LFPAK33 package. The series is engineered for high power density and reliability in compact surface-mount designs. The /2X suffix typically denotes a specific packaging variant within the manufacturer's distribution channels.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other Nexperia NextPowerS3 devices in the LFPAK33 package with similar voltage and current ratings, such as the PSMN2R0-60PS or PSMN4R4-30MLC, provided pinout and thermal characteristics are compatible.