PSMN3R5-80YSFX

$2.66

Description：NEXTPOWER 80 V, 3.5 MOHM, 150 A,
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6c1c77889cb0 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN3R5-80YSFX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is NEXTPOWER 80 V, 3.5 MOHM, 150 A,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN3R5-80YSFX

Description：NEXTPOWER 80 V, 3.5 MOHM, 150 A,
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
Rds On (Max) @ Id, Vgs：3.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：108 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7227 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：294W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SOT-1023, 4-LFPAK

Single FETs, MOSFETs datasheet and documents for PSMN3R5-80YSFX

PSMN3R5-80YSFX

Single FETs, MOSFETs Overview

The Nexperia PSMN3R5-80YSF is a standard level gate drive N-channel enhancement mode MOSFET utilizing NextPower technology. It features an LFPAK56E (SOT1023) package with a demonstrated continuous drain current of 150 A and a maximum drain-source voltage of 80 V. The device exhibits a typical on-state resistance of 3.5 mΩ at 25 °C and supports junction temperatures up to 175 °C. Key electrical parameters include a total gate charge of 75 nC, a non-repetitive avalanche energy rating of 374 mJ, and a thermal resistance from junction to mounting base of 0.45 K/W.

Single FETs, MOSFETs Feature Summary

Low Qrr for higher efficiency and lower spiking
Strong avalanche energy rating (Eas)
Avalanche rated and 100% tested
Ha-free and RoHS compliant LFPAK56E package

Single FETs, MOSFETs Applications

Synchronous rectifier in AC-DC and DC-DC
Primary side switch in DC-DC
BLDC motor control
USB-PD adapters
Full-bridge and half-bridge applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'X' against official Nexperia documentation to confirm reel packaging specifications, as datasheets typically list the base part number without suffix details. Ensure compatibility with LFPAK56E footprint requirements during design-in. Confirm that the component meets required environmental standards such as RoHS compliance before final procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency switching applications requiring robust avalanche ruggedness and low reverse recovery charge. The standard level gate drive requirement necessitates appropriate gate driver voltage levels, typically 10 V, to achieve optimal RDSon performance. Consider the 175 °C junction temperature capability for demanding thermal environments and verify PCB layout constraints for the LFPAK56E package to maximize thermal dissipation.

Single FETs, MOSFETs Part Context

This device belongs to Nexperia's NextPower series, designed for industrial and consumer applications. It employs advanced trench MOSFET technology to deliver high power density and efficiency. The LFPAK56E package provides excellent thermal performance through a copper-clip design and solder die attach, suitable for surface-mount assembly. The product is qualified for operation across a wide temperature range, supporting reliable performance in various power conversion topologies.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 80 V rating, LFPAK56E package, and similar RDSon characteristics. Verify gate charge and avalanche ratings for equivalent performance. Cross-reference with other Nexperia NextPower devices or industry-standard equivalents ensuring pinout compatibility and thermal resistance alignment.