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PSMN4R3-80ES,127 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 80V 120A I2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PSMN4R3-80ES,127
- Description：MOSFET N-CH 80V 120A I2PAK
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：111 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8161 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for PSMN4R3-80ES,127
Single FETs, MOSFETs Overview
The Nexperia PSMN4R3-80ES,127 is a standard level N-channel enhancement mode MOSFET housed in an I2PAK (TO-262) plastic package. It features a drain-source voltage of 80 V and a continuous drain current rating of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 4.3 mΩ at 25 °C and 10.3 mΩ at 175 °C when driven by a 10 V gate-source voltage. Total gate charge is typically 111 nC. It supports junction temperatures up to 175 °C and includes avalanche energy ratings for robust operation.
Single FETs, MOSFETs Feature Summary
- High efficiency achieved through low switching and conduction losses
- Compatible with standard level gate drive sources
- Qualified for operation at junction temperatures up to 175 °C
Single FETs, MOSFETs Applications
- DC-to-DC converters
- Load switch
- Motor control
- Server power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring standard level gate drive compatibility and high current handling in industrial or server environments. Ensure thermal management strategies account for the specified power dissipation limits and thermal resistance values under expected operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to Nexperia's standard level N-channel MOSFET portfolio designed for general-purpose power switching. It utilizes TrenchMOS technology within the I2PAK package to balance performance and cost for industrial, communications, and domestic equipment applications.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Nexperia I2PAK N-channel MOSFETs sharing similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution.
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