PSMN6R1-40HLX

Overview

The PSMN6R1-40HLX is a dual logic level N-channel MOSFET in an LFPAK56D package using TrenchMOS technology. It features a 40 V drain-source voltage and a typical on-state resistance of 7.2 mΩ at VGS = 5 V. The device supports a continuous drain current of 40 A and dissipates up to 64 W. It includes repetitive avalanche rating with 125 mJ energy capability. Thermal resistance from junction to mounting base is 2.36 K/W, and the component operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

• Dual MOSFET configuration in a single LFPAK56D package
• Repetitive avalanche rated for robust operation
• High reliability copper-clip solder die attach construction
• Qualified for operation up to 175 °C junction temperature

Applications

• Brushless DC motor control
• DC-to-DC converters
• High-performance synchronous rectification
• High performance and high efficiency server power supply

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the component meets all required environmental compliance standards for the intended application before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring dual N-channel switching in a compact surface-mount footprint. The logic level gate drive compatibility simplifies driver circuit requirements. Ensure thermal management strategies account for the specified junction-to-mounting base thermal resistance under expected load conditions.

Part Context

This part belongs to Nexperia's TrenchMOS portfolio, utilizing advanced trench gate technology to achieve low on-resistance. The LFPAK56D package provides enhanced thermal performance compared to standard plastic packages, making it suitable for high-power density applications in industrial and communications sectors.

Replacement Considerations

Direct substitutes must match the dual N-channel topology, 40 V rating, and LFPAK56D (SOT1205) package outline. Verify pinout compatibility and electrical parameters such as RDS(on) and gate charge to ensure functional equivalence in existing designs.

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 125 mJ when ID = 40 A, Vsup ≤ 40 V, VGS = 10 V, and initial junction temperature is 25 °C.

How does the on-state resistance vary with temperature?

At VGS = 5 V and ID = 10 A, the typical RDS(on) increases from 6 mΩ at 25 °C to 12.1 mΩ at 175 °C, with a maximum of 14.5 mΩ at the higher temperature.

What is the total gate charge specification?

The typical total gate charge (QG(tot)) is 22.2 nC, measured at ID = 10 A, VDS = 32 V, VGS = 5 V, and Tj = 25 °C.