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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 30A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：30A (Ta)
- Rds On (Max) @ Id, Vgs：9.4mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：2110pF @ 25V
- Power - Max：53W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：-
- Qualification：-
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Overview
The Nexperia PSMN8R0-40HLX is a dual logic level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK56D (Dual Power-SO8) package. It features a 40 V drain-source voltage rating and a typical on-state resistance of 9.4 mΩ at VGS = 5 V. The device supports a continuous drain current of 30 A and dissipates up to 53 W. Key dynamic parameters include a total gate charge of 15.7 nC and a non-repetitive avalanche energy capability of 84 mJ.
Feature Summary
- Dual MOSFET configuration in a single LFPAK56D package
- Logic level gate drive optimized for low-voltage control
- Repetitive avalanche rated for robust operation
- High reliability construction with copper-clip solder die attach
Applications
- Brushless DC motor control
- DC-to-DC converters
- High-performance synchronous rectification
- High performance and high efficiency server power supply
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component status remains active, as product availability and end-of-life notices are subject to change by Nexperia. Cross-reference the marking code '8R0L40H' during incoming inspection to validate authenticity.
Selection Notes
Select this component when a compact dual-N-channel solution is required for logic-level applications. The LFPAK56D package offers high power density suitable for space-constrained designs. Ensure the gate drive voltage meets the 5 V requirement for optimal RDS(on) performance. Verify thermal management capabilities align with the specified junction temperature limits.
Part Context
This part belongs to the Nexperia PSMN series of N-channel MOSFETs designed for general-purpose switching applications. The LFPAK56D package variant provides enhanced thermal performance compared to standard plastic packages. The device leverages TrenchMOS technology to achieve low conduction losses while maintaining fast switching characteristics.
Replacement Considerations
Direct substitutes must match the dual N-channel topology, 40 V rating, and LFPAK56D footprint. Verify pinout compatibility and thermal resistance values before integration.
FAQ
What is the maximum non-repetitive avalanche energy for this device?
The PSMN8R0-40HLX supports a non-repetitive drain-source avalanche energy of 84 mJ under specified test conditions.
Is the PSMN8R0-40HLX qualified for automotive use?
No, unless explicitly stated otherwise in the data sheet, this product is not automotive qualified and should not be used in automotive equipment.
What is the typical gate-source threshold voltage range?
The gate-source threshold voltage typically ranges from 1.4 V to 2.1 V at 25 °C with a drain current of 1 mA.
