PTVA101K02EV-V1-R0

Overview

The PTVA101K02EV-V1-R0 is a thermally-enhanced high power RF LDMOS FET manufactured by MACOM Technology Solutions. Designed for power amplifier applications in the 1030 MHz and 1090 MHz frequency bands, it features a bolt-down flange package (H-36275-4). Key electrical parameters include a drain-source breakdown voltage of 105 V, an operating gate voltage of 3 to 4 V, and a maximum junction temperature of 225 °C. The device delivers up to 1000 W output power with a typical gain of 18 dB and drain efficiency reaching 65% under pulsed conditions.

Feature Summary

• Broadband input matching capability
• High gain and efficiency performance
• Integrated ESD protection compliant with Human Body Model Class 2 standards
• Low thermal resistance design

Applications

• Power amplifier applications in the 1030 MHz frequency band
• Power amplifier applications in the 1090 MHz frequency band

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm packaging details. The standard version utilizes tape and reel shipping. Ensure compatibility with the H-36275-4 bolt-down flange package requirements during integration. Confirm RoHS compliance status prior to final procurement decisions.

Selection Notes

Select this component for designs requiring high power output in the 1 GHz range. Evaluate thermal management solutions to maintain junction temperatures within the specified 225 °C limit. Consider the 10:1 load mismatch tolerance when designing output matching networks. Verify that the required drive voltage aligns with the specified operating gate voltage range.

Part Context

This part belongs to MACOM's portfolio of thermally-enhanced high power RF LDMOS FETs. It is manufactured using an advanced LDMOS process designed to provide excellent thermal performance and superior reliability for demanding RF power amplifier environments.

Replacement Considerations

Consult official MACOM documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other LDMOS packages without verifying pinout and thermal specifications.

FAQ

What is the maximum junction temperature rating?

The maximum junction temperature is rated at 225 °C.

Does the device include electrostatic discharge protection?

Yes, the device includes integrated ESD protection capable of withstanding Human Body Model Class 2 stress levels.

What is the recommended package type for mounting?

The device uses the H-36275-4 package, which features a bolt-down flange design.