QH8JC5TCR

Overview

The QH8JC5TCR is a dual P-channel small-signal MOSFET from ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source voltage (V_DSS) of -60V and a continuous drain current (I_D) of -3.5A. The device exhibits low on-resistance, with typical values of 0.079Ω at V_GS = -4.5V and 0.071Ω at V_GS = -10V. Total gate charge (Q_G) is 8.5nC, and power dissipation (P_D) is rated at 1.5W. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Dual P-channel configuration for complementary switching applications
• Low on-resistance optimized for efficient power switching
• Compact TSMT-8 surface-mount package design

Applications

• General-purpose switching circuits
• Motor drive interfaces
• Power management modules

Procurement Notes

Verify the specific suffix TCR confirms tape-and-reel packaging when sourcing. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the component meets standard-grade requirements and is not intended for automotive use as per official guidelines.

Selection Notes

Select this component for designs requiring dual P-channel isolation within a compact footprint. Evaluate thermal performance against the 1.5W dissipation limit. Compare gate charge specifications against driver capabilities to ensure adequate switching speed without excessive drive current demands.

Part Context

This part belongs to ROHM's QH8 series of dual MOSFETs, designed for space-constrained applications. The TSMT-8 package provides eight terminals for integrated circuit functionality. The series targets industrial and consumer electronics where moderate voltage ratings and efficient switching are required.

Replacement Considerations

Check for direct pin-compatible alternatives if supply constraints exist. Verify that substitute parts maintain identical V_DSS, I_D, and R_DS(on) characteristics to ensure circuit compatibility without redesign.