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The QH8MB5TCR is a complementary MOSFET from ROHM Semiconductor, featuring an N-channel and P-channel pair within a single TSMT8 surface-mount package. It supports a drain-source voltage of 40V with a continuous drain current of 3.0A for the N-channel and 3.5A for the P-channel. Typical on-resistance (RDS(on)) values are 0.1Ω at VGS=4.5V and 0.07Ω at VGS=10V. The device has a total gate charge of 1.7nC and power dissipation of 1.5W. Operating temperatures range from -55°C to 150°C.
Verify the specific ordering suffix TCR against the required reel quantity of 3000 units. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure the design does not target automotive applications, as this product is classified as standard grade and is explicitly not recommended for use in vehicles.
Select this part when a matched N+P pair is needed for 40V logic-level switching in space-constrained designs. The TSMT8 package offers a small footprint suitable for dense PCB layouts. Consider the 1.5W power dissipation limit and thermal management needs for high-duty-cycle motor or fan control applications.
This component belongs to ROHM's QH8 series of complementary MOSFETs designed for low-power switching. It serves as a drop-in replacement for older discrete pairs, simplifying bill-of-materials and reducing board space. The series targets industrial and communication infrastructure markets requiring reliable 24V operation.
For legacy designs, verify pin compatibility if substituting with other ROHM complementary MOSFETs like the QH8MC5. Note that while packages may match, electrical parameters such as RDS(on) and current ratings differ significantly between models.