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The Powerex QID1210007 is a split dual silicon/silicon carbide hybrid IGBT module rated for 1200 V collector-emitter voltage and 100 A continuous collector current. It integrates two individual switches, each paired with a reverse-connected super-fast recovery free-wheeling SiC Schottky diode. The device features an isolated copper baseplate with aluminum nitride insulation to facilitate thermal management. Designed for high-frequency hard switching up to 30 kHz and soft switching up to 80 kHz, it offers low off-state switching energy and low internal inductance of 10 nH.
Verify the specific revision status against the manufacturer's latest documentation before finalizing design integration. Confirm that the preliminary information aligns with current production capabilities and testing data. Ensure all electrical ratings and thermal characteristics match the system requirements for the intended operating environment.
Select this component for applications requiring high-frequency operation above standard silicon limits. The hybrid Si/SiC architecture supports efficient soft switching scenarios. Evaluate the thermal resistance values against the specific cooling solution to ensure junction temperatures remain within the specified maximum rating during peak load conditions.
This module belongs to the Powerex IGBT product line designed for high-frequency power conversion. It utilizes a split dual topology to provide two isolated switching channels within a single package. The construction emphasizes low internal inductance and robust thermal isolation to support demanding industrial and automotive power electronics environments.
No public confirmed substitute part numbers are available in the provided documentation.