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QPA1111TR7 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Qorvo. Its product description is 30W X-BAND MMIC PA. Review the specifications below when checking this part for your BOM.
The QPA1111TR7 is a gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier designed for X-band applications. It operates within a frequency range of 8.5 GHz to 10.5 GHz, delivering an output power of 30 watts. The device provides a typical gain of 38 dB with a maximum power dissipation capability of 65 W. It utilizes a surface-mount SMD/SMT package configuration and functions reliably across a temperature range from -40°C to +85°C.
Verify component authenticity through authorized Qorvo distribution channels. Confirm that the specific suffix matches the required reel packaging specifications. Ensure thermal management designs align with the 65 W power dissipation rating. Validate that the operating environment remains within the specified -40°C to +85°C temperature limits for reliable long-term performance.
Select this component when high output power and broad bandwidth are critical in the X-band range. The GaN construction offers superior efficiency compared to traditional technologies. Consider the 40-QFN package dimensions for PCB layout constraints. Evaluate thermal requirements carefully due to the high power handling capabilities inherent to this class of RF amplifiers.
This part belongs to the QPA1111 series of RF amplifiers manufactured by Qorvo. It represents a specialized solution for high-performance microwave applications requiring significant power output in a small form factor. The series is tailored for defense and aerospace sectors where reliability and spectral purity are paramount.
No public confirmed substitute part numbers are available.
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