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QPA2610TR7 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Qorvo. Its product description is 2 W X-BD GAN PA. Review the specifications below when checking this part for your BOM.
The QPA2610TR7 is a packaged, high-performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It covers the frequency range of 8.5 GHz to 10.5 GHz. The device delivers an output power of 2W with a gain of 38.5 dB. It operates at a supply voltage of 20 V and draws a current of 56 mA. The input return loss is 19 dB, and the power dissipation is 8.8 W. It is housed in a QFN-24 package.
Verify the specific suffix TR7 against official Qorvo documentation to confirm reel packaging specifications. Ensure compatibility with the QPA2610EVB evaluation board if development support is required. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement plans.
Select this component when operating within the 8.5 to 10.5 GHz band requiring 2W output power. The GaN on SiC process offers robust thermal handling compared to other technologies. Consider the QFN-24 footprint for PCB layout constraints. Verify that the 20V supply requirement aligns with system power architecture.
This part belongs to the QPA2610 series from Qorvo. It represents a packaged solution derived from the company's QGaN15 process technology. The device serves as a power amplifier stage for wireless and RF integrated circuits. It is distinct from driver amplifiers or lower-power variants within the broader portfolio.
Public confirmed substitute part numbers are not available in the provided documentation.
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