QPA3070TR7

RF Amplifiers Overview

The QPA3070TR7 is a packaged high-power S-band amplifier fabricated on Qorvo's 0.25 um GaN on SiC process. It operates within the 2.9 to 3.5 GHz frequency range and delivers 150 W of saturated output power, equivalent to 52 dBm. The device is housed in a compact 48-QFN (7x7) package.

RF Amplifiers Feature Summary

• High-power output capability with 150 W saturation
• GaN on SiC fabrication technology for efficiency
• Compact 48-QFN surface-mount packaging

RF Amplifiers Applications

• Radar systems
• Electronic warfare applications
• Military communications

RF Amplifiers Procurement Notes

Verify the specific suffix TR7 indicates tape-and-reel packaging configuration against official Qorvo documentation. Confirm that the 48-QFN pinout and thermal pad requirements match your PCB layout design. Ensure compatibility with the required bias voltages and drive levels for the target RF system architecture before procurement.

RF Amplifiers Selection Notes

Select this component when high linear power output is required in the S-band spectrum. The GaN on SiC process offers superior thermal handling compared to traditional silicon devices. Evaluate the trade-off between the high power density and the thermal management needs imposed by the small QFN footprint.

RF Amplifiers Part Context

This part belongs to Qorvo's QPA series of RF amplifiers. It utilizes the QGaN25HV production process. The device is designed for demanding environments requiring robust performance and high power density in a minimized form factor suitable for modern electronic systems.

RF Amplifiers Replacement Considerations

No public confirmed substitute part numbers are available in the provided data.