QPD1013

RF Amplifiers Overview

The QPD1013 is a discrete Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT) designed for RF power amplification. It operates from DC to 2.7 GHz with a typical output power of 150 W at the 3 dB compression point (P3dB). The device supports both continuous wave and pulse modes, utilizing a 65 V operating voltage. Key electrical characteristics include a gain of approximately 21.8 dB and a typical Power Added Efficiency (PAE) of 64.8% at 3 dB back-off. It is housed in a 6-pin DFN package.

RF Amplifiers Feature Summary

• Discrete GaN-on-SiC HEMT technology for high-power RF applications
• Broadband operation spanning DC to 2.7 GHz
• Capable of delivering 150 W output power at P3dB
• Supports both CW and pulsed operational modes

RF Amplifiers Applications

• Military electronic warfare systems
• Base station power amplifiers
• Test and measurement equipment
• High-power radar transmitters

RF Amplifiers Procurement Notes

Verify component authenticity through authorized channels due to restricted supply conditions. Confirm that the specific lot matches the required frequency range and power specifications. Ensure handling procedures account for moisture sensitivity and electrostatic discharge risks associated with GaN devices. Cross-reference datasheet revisions to confirm pinout and thermal pad configurations align with design requirements.

RF Amplifiers Selection Notes

Select this component for designs requiring high linearity and efficiency across a wide bandwidth up to 2.7 GHz. The 65 V bias requirement must be supported by the power supply architecture. Consider thermal management solutions suitable for 150 W dissipation levels. Evaluate impedance matching networks for unmatched transistor topologies to optimize PAE and gain flatness within the target application band.

RF Amplifiers Part Context

The QPD1013 belongs to Qorvo's portfolio of high-power GaN RF transistors. It complements other broadband devices like the QPD1014, which targets lower frequencies. The series is engineered for robust performance in demanding RF environments, offering a balance of high output power and efficiency compared to traditional LDMOS technologies.

RF Amplifiers Replacement Considerations

No direct public substitute part numbers are confirmed for the QPD1013. Designers should evaluate alternative GaN transistors from Qorvo or other manufacturers based on frequency range, power output, and package compatibility, ensuring all electrical parameters meet or exceed original specifications.