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The QS5Y1TR is a dual bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor, featuring one NPN and one PNP transistor in an emitter-coupled configuration. It is housed in a TSMT-5 surface-mount package. The device supports a maximum collector-emitter voltage of 30V and a continuous collector current of 3A. Key electrical parameters include a DC current gain (hFE) ranging from 200 to 500 at 500mA, with transition frequencies of 270MHz for the NPN and 300MHz for the PNP. Power dissipation is rated at 1.25W, and the maximum operating temperature reaches +150°C.
Verify the specific ordering suffix against the manufacturer's datasheet to ensure correct packaging format, as variations exist between tape-and-reel and cut-tape options. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement to align with assembly line standards.
Select this component when a matched NPN/PNP pair is required for differential or push-pull configurations. Ensure the 30V voltage rating and 3A current capacity meet the circuit demands. Consider the TSMT-5 footprint constraints during PCB layout design to maintain thermal performance within the specified power dissipation limits.
This part belongs to ROHM's series of small-signal BJT arrays designed for general-purpose switching and amplification. It serves as a compact alternative to discrete transistor pairs, reducing board space and simplifying assembly processes in consumer electronics and industrial control modules.
Check for direct pin-compatible substitutes such as other dual BJT arrays from ROHM or competitors like ON Semiconductor. Verify that replacement parts match the 30V/3A ratings and TSMT-5 package dimensions to ensure mechanical and electrical compatibility without redesigning the PCB.