QS8J13TR

QS8J13TR

$1.06
  • Description:MOSFET 2P-CH 12V 5.5A TSMT8
  • Series:-

SKU:cdb2f1e6e26f Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 12V 5.5A TSMT8
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:5.5A
  • Rds On (Max) @ Id, Vgs:22mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:60nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:6300pF @ 6V
  • Power - Max:1.25W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:TSMT8
  • Grade:-
  • Qualification:-

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QS8J13TR

Overview

The QS8J13TR is a dual P-Channel MOSFET array manufactured by ROHM Semiconductor, designed for surface-mount applications in the TSMT-8 package. It features a drain-source breakdown voltage of 12 V and a continuous drain current of 5.5 A. The device exhibits a typical on-resistance of 0.022 ohms and operates with a gate-source voltage range of ±10 V. Key electrical characteristics include a gate charge of 2.4 nC and a forward transconductance minimum of 1.4 S. The component supports an operating temperature range from -55°C to +150°C with a power dissipation rating of 1.5 W.

Feature Summary

  • Dual P-Channel configuration integrated into a single compact surface-mount package
  • Low on-resistance optimized for efficient power switching applications
  • Enhanced thermal performance supporting high junction temperatures up to 150°C

Applications

  • DC-DC converter output stages
  • Battery protection circuits
  • Motor control driver interfaces

Procurement Notes

Verify the specific manufacturer part number against official ROHM documentation to ensure compatibility with design requirements. Confirm that the TSMT-8 package dimensions align with PCB layout constraints. Check the lifecycle status, as this component may be marked as not recommended for new designs. Ensure all handling procedures comply with electrostatic discharge guidelines for sensitive semiconductor devices.

Selection Notes

Select this component when a dual P-Channel solution is required for low-voltage, high-current applications. The 12 V rating suits systems operating within standard logic levels. Consider the 5.5 A current capacity and low Rds(on) for efficiency needs. Evaluate the TSMT-8 footprint availability against existing board space. Compare thermal dissipation capabilities against expected load conditions to ensure reliable operation under maximum stress scenarios.

Part Context

This part belongs to ROHM's series of dual MOSFET arrays, specifically targeting applications requiring compact integration of two P-Channel switches. The QS8J13TR provides a space-saving alternative to discrete components, simplifying assembly processes. It is engineered for use in portable electronics and power management modules where size and efficiency are critical design parameters.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference data through official manufacturer channels before considering alternatives.

QS8J13TRQS8J13TR
$1.06
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