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The QSX8TR is a dual NPN bipolar junction transistor array manufactured by ROHM Semiconductor. It features a collector-emitter breakdown voltage (VCEO) of 30 V and a continuous collector current rating of 1 A. The device operates with a transition frequency (fT) of 320 MHz and dissipates up to 1.25 W of power. It utilizes a TSMT-6 surface-mount package, also identified as SC-95 or SOT-457. Key electrical limits include a collector-base voltage of 30 V, an emitter-base voltage of 6 V, and a saturation voltage of 350 mV. The component supports a maximum operating temperature of +150°C and is supplied in tape and reel packaging.
Verify the specific datasheet version when sourcing, as some sources list power dissipation at 500 mW while official specifications indicate 1.25 W. Confirm the package designation matches TSMT-6 or SC-95 to ensure compatibility with PCB footprints. Check RoHS compliance details directly from the manufacturer's documentation before finalizing procurement orders.
Select this component for designs requiring dual NPN configurations in a minimal footprint. The 30 V voltage rating suits low-voltage digital and analog systems. Ensure thermal management aligns with the 1.25 W dissipation limit if operating near maximum current thresholds. Compare against similar arrays like US6X8TR if different power ratings are required.
This part belongs to ROHM Semiconductor's line of bipolar transistor arrays. It serves as a dual-transistor alternative to discrete components, reducing board space and assembly complexity. The TSMT-6 package is standard for small-signal applications where multiple identical transistors are needed in close proximity.
The US6X8TR is a documented substitute part number within the same product family. Verify pinout and electrical parameters match before substitution.