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The QSZ2TR is a dual bipolar junction transistor array manufactured by Rohm Semiconductor, housed in a TSMT5 surface-mount package. It integrates one NPN and one PNP transistor configured in an emitter-coupled arrangement. The device supports a maximum collector-emitter voltage of 30V and a continuous collector current of 1.5A. Key electrical characteristics include transition frequencies of 300MHz for the NPN section and 280MHz for the PNP section. DC current gain (hFE) is specified at a minimum of 270 when tested at 100mA and 2V. The component handles a maximum power dissipation of 1.25W and features saturation voltages of 350mV (NPN) and 370mV (PNP) at 50mA base current and 1A collector current.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging format. Confirm that the component status aligns with design requirements, as availability may vary. Ensure compliance with RoHS3 specifications and check for any specific automotive or industrial qualification requirements if applicable to the target application environment.
Select this component when a matched NPN/PNP pair is required for high-speed switching or amplification in space-constrained designs. The TSMT5 package offers a compact footprint compared to discrete solutions. Consider the 30V voltage rating and 1.5A current capability to ensure adequate headroom for the intended load conditions and thermal management strategy.
The QSZ2TR belongs to the QSZ2 series of dual bipolar transistor arrays from Rohm Semiconductor. This series is designed to provide matched performance characteristics between the integrated NPN and PNP elements, ensuring symmetry in differential applications. The TSMT5 package is a specialized thin-type SOT-23 variant optimized for surface-mount assembly processes.
Publicly confirmed substitute part numbers are not available in the provided source data. Verify pin compatibility and electrical parameters before considering alternative manufacturers.