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The QSZ3TR is a general-purpose complex transistor from ROHM Semiconductor, integrating an isolated PNP transistor (Tr1) and NPN transistor (Tr2) within a single TSMT5 surface-mount package. The device utilizes silicon epitaxial planar technology to provide compact switching solutions. Tr1 offers a collector-emitter breakdown voltage of -12V with a continuous current rating of -3A, while Tr2 provides +12V and +3A respectively. Both transistors feature low saturation voltages and high DC current gains ranging from 270 to 680 at specified test conditions.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel quantity or tape specifications. Ensure that the component meets the required environmental standards and RoHS compliance status before finalizing procurement orders.
Select this component when space constraints require dual-transistor functionality in a minimal footprint. Consider the 12V voltage ratings and 3A current capabilities to ensure suitability for the target circuit loads. Verify thermal dissipation requirements relative to the total power rating of 1.25W for the package.
This part belongs to ROHM's general-purpose transistor lineup designed for compact electronic applications. It serves as a consolidated alternative to using discrete PNP and NPN components, simplifying board layout and assembly processes for standard consumer and industrial electronics.
Consult official substitution guides for equivalent complex transistors. Verify pinout compatibility and electrical parameter alignment if replacing existing designs with similar integrated transistor packages.