R0577YC12E

R0577YC12E

$152.68
  • Description:SCR 1.2KV 1169A W58
  • Series:-

SKU:a61ac00689b6 Category: Brand:

  
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Product Detailed Parameters

  • Description:SCR 1.2KV 1169A W58
  • Series:-
  • Mfr:IXYS
  • Package:Box
  • Voltage - Off State:1.2 kV
  • Voltage - Gate Trigger (Vgt) (Max):3 V
  • Current - Gate Trigger (Igt) (Max):200 mA
  • Current - Hold (Ih) (Max):1:00 AM
  • Current - Non Rep. Surge 50, 60Hz (Itsm):6600A @ 50Hz
  • SCR Type:Standard Recovery
  • Operating Temperature:-40°C ~ 125°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:TO-200AB, B-PuK
  • Supplier Device Package:W58
  • Voltage - On State (Vtm) (Max):2.15 V
  • Current - On State (It (AV)) (Max):577 A
  • Current - On State (It (RMS)) (Max):1169 A
  • Current - Off State (Max):60 mA

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R0577YC12E

Overview

The R0577YC12E is a high-power Silicon Controlled Rectifier (SCR) manufactured by IXYS. It features a rated repetitive off-state voltage of 1.2 kV and a maximum on-state current of 1169 A. The device utilizes a W58 package configuration designed for robust thermal management in heavy-duty applications. Key electrical characteristics include a gate trigger capability suitable for industrial control circuits, ensuring reliable switching under high load conditions.

Feature Summary

  • High current handling capacity for demanding power loads
  • Robust voltage blocking capability for high-voltage systems
  • Durable package design optimized for thermal dissipation

Applications

  • Industrial automation systems
  • Embedded power electronics
  • Heavy-duty motor control applications

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified supply chain partners. Confirm RoHS compliance status and datasheet revisions prior to integration. Ensure storage conditions meet semiconductor specifications to maintain performance integrity during assembly processes.

Selection Notes

Evaluate thermal resistance requirements against the W58 package capabilities. Verify gate drive circuit compatibility with the specified trigger parameters. Assess system voltage margins relative to the 1.2 kV rating to ensure safe operational boundaries under transient conditions.

Part Context

This component belongs to the IXYS thyristor portfolio, engineered for high-power switching solutions. It complements other industrial-grade semiconductors by providing reliable conduction in environments requiring substantial current handling and voltage isolation within compact physical footprints.

Replacement Considerations

Check official IXYS documentation for direct cross-reference part numbers. Verify pinout compatibility and thermal interface dimensions before substituting. Confirm that alternative devices meet or exceed the 1.2 kV voltage and 1169 A current specifications.

R0577YC12ER0577YC12E
$152.68
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