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R6009JNJGTL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 600V 9A LPTS. Review the specifications below when checking this part for your BOM.
The R6009JNJGTL is a third-generation PrestoMOS N-channel power MOSFET manufactured by ROHM Semiconductor. It features a TO-263-3 (D2PAK) surface-mount package and supports a drain-source voltage of 600V with a continuous drain current of 9A. The device exhibits a typical on-resistance of 585 mΩ at VGS=10V and a total gate charge of 22 nC. It operates within a temperature range of -55°C to +150°C, offering fast recovery characteristics suitable for high-efficiency switching applications.
Verify the specific suffix GTL against official datasheets to confirm packaging details and compliance status. Ensure compatibility with standard D2PAK footprints during PCB layout. Confirm RoHS and REACH compliance requirements with the manufacturer before finalizing procurement orders.
Select this component when a 600V rating and 9A current capacity are required in a compact surface-mount format. Consider the 585 mΩ on-resistance for conduction loss calculations. Evaluate the 22 nC gate charge against driver capabilities to ensure adequate switching speed without excessive drive current demands.
This part belongs to the R60xxJNx series of PrestoMOS transistors, which integrate fast recovery diodes. These devices are engineered to reduce design complexity and improve efficiency in motor drive and power supply applications compared to discrete solutions.
Check for direct pin-compatible alternatives within the same PrestoMOS family, such as the R6007JNJGTL or R6020JNJGTL, depending on specific current and resistance requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.