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R6020ENJTL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 600V 20A LPTS. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for R6020ENJTL
- Description：MOSFET N-CH 600V 20A LPTS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：196mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：LPTS
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for R6020ENJTL
Single FETs, MOSFETs Overview
The R6020ENJTL is a N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an LPTS (TO-263S) surface-mount package. It features a drain-source voltage rating of 600V and a continuous drain current of 20A. The device exhibits a typical on-resistance of 0.17Ω at a gate drive voltage of 10V, with a total gate charge of 60nC. Power dissipation capacity is rated at 40W, and the maximum junction temperature reaches 150°C. Designed for low-noise applications, it supports simple driving circuits and parallel operation.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for efficient conduction
- Fast switching speed capabilities
- Guaranteed gate-source voltage of ±20V
- Facilitates simple driving circuit design
Single FETs, MOSFETs Applications
- Power supply systems
Single FETs, MOSFETs Procurement Notes
Verify component status carefully before procurement as this part is designated as Not Recommended for New Designs (NRND). Confirm that existing inventory or legacy supply channels are viable for ongoing production needs. Ensure compatibility with current manufacturing processes since new design adoption is discouraged by the manufacturer. Check RoHS compliance documentation to meet environmental standards.
Single FETs, MOSFETs Selection Notes
Select this component only for maintenance of existing designs where the specific electrical characteristics match the original requirements. Evaluate thermal management strategies given the 40W power dissipation limit in the TO-263S package. Consider the 600V breakdown voltage and 20A current handling for appropriate load margins. Verify that the 10V drive voltage requirement aligns with available control logic levels.
Single FETs, MOSFETs Part Context
This device belongs to the R6020 series of low-noise power MOSFETs from ROHM Semiconductor. It shares core specifications with other variants like the R6020ENZ but utilizes a surface-mount LPTS package instead of through-hole options. The series targets general-purpose switching applications requiring robust performance in compact form factors.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for approved substitute part numbers. No verified public substitutes are listed for this specific variant.
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