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R6020KNZC8 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CHANNEL 600V 20A TO3PF. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for R6020KNZC8
- Description：MOSFET N-CHANNEL 600V 20A TO3PF
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：196mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1550 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：68W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PF
- Package / Case：TO-3P-3 Full Pack
Single FETs, MOSFETs datasheet and documents for R6020KNZC8
Single FETs, MOSFETs Overview
The R6020KNZC8 is a silicon N-channel power MOSFET manufactured by ROHM Semiconductor. It features a TO-3PF package with three terminals and supports through-hole mounting. Key electrical parameters include a drain-source voltage (Vds) of 600 V, a continuous drain current (Id) of 20 A, and a typical on-resistance (Rds(on)) of 0.17 Ω at 10 V gate drive. The device has a threshold voltage (Vgs(th)) of 5 V, a total gate charge (Qg) of 40 nC, and a maximum power dissipation (Pd) of 68 W. Operating temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for efficient conduction
- Ultra-fast switching capabilities
- Facilitates easy parallel operation
Single FETs, MOSFETs Applications
- Power supply circuits
- General switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific package type and pinout configuration against the official datasheet before integration. Confirm that the component meets all required thermal management specifications for the intended application environment. Ensure compliance with relevant environmental directives such as RoHS standards during the sourcing process.
Single FETs, MOSFETs Selection Notes
Select this component when a robust N-channel MOSFET with high voltage blocking capability and moderate current handling is required. The TO-3PF package offers distinct thermal advantages for through-hole implementations compared to surface-mount alternatives. Consider the specific on-resistance and switching speed requirements relative to the system's efficiency targets.
Single FETs, MOSFETs Part Context
This part belongs to ROHM's lineup of high-voltage power MOSFETs designed for industrial and consumer power electronics. It utilizes Super Junction technology to achieve superior performance metrics compared to conventional planar structures. The product line emphasizes reliability and thermal stability for demanding power conversion tasks.
Single FETs, MOSFETs Replacement Considerations
Check for direct cross-references in distributor databases. Verify compatibility of pinouts and thermal characteristics if substituting with other 600V N-channel devices.
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