R6024ENZ1C9

Single FETs, MOSFETs Overview

The R6024ENZ1C9 is a single N-channel enhancement mode MOSFET manufactured by ROHM Semiconductor using silicon technology. It utilizes the Super Junction-MOS EN architecture and is housed in a TO-247-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 600 V, a continuous drain current (Id) of 24 A, and a maximum on-resistance (Rds(on)) of 165 mOhms at a gate-source voltage of 10 V. The device features a gate charge (Qg) of 70 nC, a threshold voltage (Vgs(th)) of 4 V, and a power dissipation rating of 245 W. It operates within a temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Employs Super Junction-MOS EN technology for optimized switching performance.
• Designed for high-voltage applications with a 600 V drain-source rating.
• Features low on-resistance to minimize conduction losses.

Single FETs, MOSFETs Applications

• High-frequency switching power supplies
• AC/DC converters
• DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'C9' against the manufacturer's official documentation to confirm the exact tape-and-reel quantity and packaging configuration. Ensure that the TO-247-3 lead form matches the target PCB footprint requirements. Cross-reference the RoHS compliance status directly with the latest datasheet revision before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rated N-channel MOSFET with a 24 A continuous current capacity is required in a TO-247 package. The 165 mOhm on-resistance makes it suitable for efficient power conversion where moderate conduction losses are acceptable. Verify that the 4 V threshold voltage aligns with the available gate drive voltage levels in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the ROHM Super Junction-MOS EN series, which integrates vertical super junction structures to achieve superior figure-of-merit characteristics compared to conventional planar MOSFETs. The EN series is specifically engineered for high-efficiency power supply applications requiring fast switching speeds and reduced thermal stress.

Single FETs, MOSFETs Replacement Considerations

The R6024ENZ4C13 is listed as a similar level replacement with the same pinout and package type. Both parts share identical electrical ratings including 600 V, 24 A, and comparable on-resistance values.