R6035ENZ1C9

Single FETs, MOSFETs Overview

The R6035ENZ1C9 is a through-hole N-channel power MOSFET manufactured by ROHM Semiconductor. It features a TO-247 package with a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 35 A at case temperature. The device exhibits a typical on-resistance (Rds(on)) of 92 mΩ at a drive voltage of 10 V. Key electrical characteristics include a gate charge (Qg) of approximately 70 nC, a maximum power dissipation of 102 W, and an operating junction temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes super junction technology for enhanced switching performance and low conduction losses.
• Designed for high-speed switching applications with optimized gate charge characteristics.
• Features robust thermal management capabilities within the TO-247 leaded package.

Single FETs, MOSFETs Applications

• Motor control systems
• Inverter circuits
• High-frequency switching power supplies

Single FETs, MOSFETs Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm that the specific ordering suffix matches required packaging standards. Check supply status as this part may be obsolete or restricted for new designs. Ensure thermal interface materials are compatible with the TO-247 package dimensions. Validate regulatory compliance requirements against current manufacturing specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 600 V blocking capability and moderate current handling in through-hole assemblies. Compare Rds(on) values at 10 V drive voltage against alternative devices to ensure compatibility with existing gate driver outputs. Evaluate thermal resistance parameters relative to the intended heatsinking strategy. Consider the availability of recommended replacement parts if this model is discontinued.

Single FETs, MOSFETs Part Context

This device belongs to the R6035 series of N-channel MOSFETs from ROHM Semiconductor. The series is characterized by super junction structures designed for efficiency in power conversion. The R6035ENZ1 variant specifically targets motor and inverter applications, offering a balance between voltage rating and on-state resistance in a standard industrial package.

Single FETs, MOSFETs Replacement Considerations

The R6035ENZ4C13 is listed as a recommended replacement with the same pinout and package. Verify parameter equivalence, particularly regarding on-resistance and gate charge, before substituting.