SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RB085B-40 is a silicon epitaxial planar Schottky barrier diode designed for general rectification. It features a power mold type (CPD) construction with low forward voltage and high reliability. The device supports an average rectified forward current of 10 A per diode, with a peak surge forward current rating of 45 A. It withstands a repetitive reverse voltage of 45 V and a DC reverse voltage of 40 V. The maximum forward voltage is 0.55 V at 5.0 A, while the reverse current is limited to 200 µA at 40 V. The junction temperature reaches 150°C, and thermal impedance from junction to case is 6.0 °C/W.
Verify the specific ordering suffix 'TL' against the manufacturer's latest documentation to confirm taping specifications and packaging quantity. Confirm that the component status remains acceptable for your project requirements, as this part may be designated as not recommended for new designs in updated catalogs. Ensure all electrical parameters align with your circuit design constraints before finalizing procurement.
Select this component when a robust surface-mount Schottky diode is required for general-purpose rectification applications. The CPD package provides mechanical stability, while the low forward voltage aids in efficiency. Consider the 10 A continuous current rating and 45 A surge capability to ensure adequate headroom for your specific load conditions and transient requirements.
This component belongs to the ROHM Schottky barrier diode family, specifically engineered for standard rectification tasks. It utilizes silicon epitaxial planar technology to deliver consistent performance. The RB085B-40 is distinct within its series due to its specific power mold package and defined thermal characteristics suitable for various electronic equipment.
Consult official ROHM documentation for direct pin-compatible substitutes or updated series replacements if this part is discontinued. Verify that any alternative maintains identical voltage, current, and thermal ratings to ensure circuit compatibility without redesign.
The maximum junction temperature is 150°C.
It is constructed using silicon epitaxial planar technology with a power mold type (CPD) package.
The thermal impedance from junction to case is 6.0 °C/W.