SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RB085BGE-30TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 surface-mount package. It features a dual anode common cathode configuration with a 30V reverse voltage rating and a 10A average forward current capability. Key electrical parameters include a maximum repetitive reverse voltage of 35V, a forward voltage of 480mV at specified conditions, and a low reverse leakage current of 300µA. The device supports a 50A non-repetitive surge current and operates at junction temperatures up to +150°C.
Verify the specific suffix 'TL' against the manufacturer's official datasheet to confirm tape and reel packaging specifications. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the Mouser part number 755-RB085BGE-30TL with the original ROHM documentation to validate authenticity and technical accuracy before procurement.
Select this component when a dual Schottky diode in a TO-252 package is required for high-current applications. The 30V rating suits low-voltage DC systems. Consider the 480mV forward voltage for efficiency calculations. Verify that the 10A continuous current rating aligns with the thermal management design of the target circuit board.
This part belongs to the RB085BGE series of Schottky barrier diodes from ROHM Semiconductor. The series is designed for general rectification purposes with a focus on low forward voltage and high reliability. The TO-252-3 package provides a balance between current handling capacity and surface-mount convenience for automated assembly processes.
The RB085BM-30TL is listed as an alternative within the same product family, sharing similar electrical characteristics and package type. Verify specific parameter differences such as forward current ratings between the BGE and BM variants before substitution.