RB085T-90

RB085T-90

  • Description:DIODE ARR SCHOTT 90V 5A TO-220FN
  • Series:-

SKU:e27ea18bea8d Category: Brand:

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Product Detailed Parameters

  • Description:DIODE ARR SCHOTT 90V 5A TO-220FN
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):90 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:830 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 µA @ 90 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220FN
  • Grade:-
  • Qualification:-

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RB085T-90

Overview

The RB085T-90 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for general-purpose rectification. It features a dual anode common cathode configuration housed in a TO-220FN-3 leaded package. The device supports a maximum repetitive reverse voltage of 90 V and an average rectified forward current of 6 A. Key electrical characteristics include a maximum forward voltage of 750 mV at 5 A and a maximum reverse current of 150 µA at 90 V. It operates with a junction temperature up to +150 °C and withstands a non-repetitive peak forward surge current of 100 A.

Feature Summary

  • Dual anode common cathode configuration for flexible circuit integration
  • Low forward voltage characteristic for improved efficiency
  • High reliability construction suitable for automotive standards

Applications

  • Automotive battery management systems
  • General purpose rectification circuits
  • DC-DC converter output stages

Procurement Notes

Verify the specific ordering suffix (e.g., C9) against the manufacturer's official datasheet to ensure correct packaging and pinout compatibility. Confirm that the component status aligns with project requirements, as this series may be designated as not recommended for new designs. Cross-reference RoHS compliance documentation to meet environmental regulations. Ensure thermal management solutions account for the TO-220FN package characteristics during implementation.

Selection Notes

Select this component when a low-voltage, high-current Schottky solution is required in a through-hole format. The dual anode structure allows for use in full-wave rectification or logic OR-ing applications without additional components. Compare the 6 A continuous current rating against load requirements to prevent thermal overload. Consider the 90 V reverse voltage margin relative to the system's peak inverse voltage to ensure safe operation under transient conditions.

Part Context

This part belongs to the RB085T series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and low reverse leakage current, targeting high-efficiency power conversion applications. The TO-220FN package provides robust mechanical mounting and heat dissipation capabilities compared to smaller surface-mount alternatives, making it suitable for higher power density designs requiring through-hole assembly.

Replacement Considerations

The RB085T-90HZ is a documented alternative within the same series offering similar electrical specifications. Verify pin compatibility and thermal performance before substitution. Check if the replacement maintains the required AEC-Q101 automotive qualification if applicable to the target application.

RB085T-90RB085T-90

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