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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 90V 10A TO220FN
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：90 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：830 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：150 µA @ 90 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FN
- Grade：-
- Qualification：-
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Overview
The RB085T-90NZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for general-purpose rectification. It features a dual anode common cathode configuration housed in a TO-220FN-3 package with through-hole mounting. Key electrical parameters include a maximum repetitive reverse voltage of 90 V and an average forward current rating of 10 A. The device exhibits a maximum forward voltage of 0.55 V at 5 A and a maximum reverse current of 0.2 mA at 40 V. It supports a non-repetitive peak forward surge current of 100 A and operates at junction temperatures up to +150 °C.
Feature Summary
- Dual anode common cathode configuration for flexible circuit integration
- Low reverse current characteristics ensuring high reliability
- Robust thermal performance with a maximum junction temperature of +150 °C
Applications
- General purpose rectification circuits
- DC/DC converter output stages
- Battery management systems
Procurement Notes
Verify the specific suffix NZC9 against the official ROHM datasheet to confirm packaging details and compliance status. Confirm availability as this component may be designated as Not Recommended for New Designs (NRND). Ensure the procurement channel provides valid traceability documentation for automotive or industrial grade requirements if applicable.
Selection Notes
Select this component when a through-hole Schottky diode with a 90 V rating and 10 A continuous current capability is required. The low forward voltage drop contributes to improved efficiency in power conversion applications. Consider the TO-220FN-3 package size for thermal dissipation needs and board space constraints compared to surface-mount alternatives.
Part Context
This part belongs to the RB085T series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and low reverse leakage current, making it suitable for high-efficiency rectification. The TO-220FN-3 package variant offers enhanced thermal performance compared to standard TO-220 packages, supporting higher power densities in compact designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with existing designs by matching electrical ratings and pin configurations before considering alternative components.
