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The RB088BGE-40TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-252-3 surface-mount package. The device supports a maximum repetitive reverse voltage of 45 V and an average rectified forward current of 10 A. Key electrical parameters include a maximum forward voltage of 770 mV at 5 A, a peak forward surge current capability of 50 A, and a maximum reverse current of 3 uA. The component operates within a junction temperature range up to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before finalizing procurement. Ensure the component meets all required environmental standards for the intended application environment.
Select this component when a dual anode common cathode topology is required for synchronous rectification or logic OR-ing functions. The TO-252-3 package provides adequate thermal dissipation for 10 A continuous current applications. Verify that the 45 V reverse voltage rating exceeds the maximum circuit voltage with appropriate safety margins.
This part belongs to the RB088BGE series of Schottky barrier diodes designed for high-efficiency switching applications. The series utilizes silicon technology to achieve low forward voltage and minimal reverse leakage. The RB088BGE-40TL specifically targets general-purpose power management designs requiring reliable rectification in compact surface-mount form factors.
The RB088BGE-40TL is functionally equivalent to the RB088BM-40TL, which shares the same pinout and package dimensions. Designers should verify that the replacement part meets identical electrical specifications and thermal requirements before substitution.