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The RB088BGE150TL is a Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with silicon technology. Key electrical parameters include a maximum repetitive reverse voltage of 150 V and an average rectified forward current of 10 A. The device exhibits a typical forward voltage of 780 mV at specified conditions and a low reverse leakage current of 15 uA. It supports a forward surge current of 50 A and operates at junction temperatures up to +150 °C.
Verify the specific suffix TL against official documentation to confirm reel packaging specifications. Ensure compatibility with RoHS and REACH requirements as stated in the manufacturer's datasheet. Confirm that the TO-252-3 footprint matches the target PCB layout before finalizing procurement decisions.
Select this component when a dual-diode arrangement in a compact SMD package is required. The 150 V rating suits medium-voltage applications, while the 10 A current capacity handles moderate loads. Consider the TO-252-3 thermal performance for heat dissipation needs in space-constrained designs.
This part belongs to the RB088 series of Schottky barrier diodes from ROHM Semiconductor. The series offers various voltage ratings and packages, including through-hole and surface-mount options. The BGE suffix indicates the specific TO-252-3 package variant within this product line.
The RB088BM150FHTL is a documented replacement option with identical pinout and package. Verify if automotive qualification is required, as the BM variant holds AEC-Q101 certification unlike the standard BGE version.