RB088BM-30FHHTL

Overview

The RB088BM-30FHH is a silicon epitaxial planar Schottky barrier diode with an AEC-Q101 qualification. It features a cathode common dual configuration in a TO-252M (D-PAK) package. Key electrical ratings include a repetitive peak reverse voltage of 35 V, a reverse voltage of 30 V, and an average rectified forward current of 10 A per diode. The device supports a peak forward surge current of 50 A and operates at a maximum junction temperature of 175 °C. Electrical characteristics specify a maximum forward voltage of 0.72 V at 5 A and a maximum reverse current of 3 µA at 30 V.

Feature Summary

• High reliability automotive-grade component
• Ultra-low reverse leakage current
• Power mold type construction

Applications

• Switching power supplies

Procurement Notes

Verify the specific ordering suffix TL against the required packaging format before procurement. Confirm that the component meets the necessary AEC-Q101 standards for your target application environment. Ensure thermal design accounts for the specified junction-to-case resistance to prevent thermal runaway under load conditions.

Selection Notes

Select this component for applications requiring high current handling and low forward voltage drop in a surface-mount form factor. Consider the 175 °C junction temperature rating for high-temperature environments. Verify that the TO-252M package dimensions fit the intended PCB footprint and that the thermal resistance values align with the system's cooling capabilities.

Part Context

This part belongs to the RB088 series of Schottky barrier diodes designed for automotive and industrial switching power supply applications. It utilizes a silicon epitaxial planar structure to ensure robust performance. The series is characterized by its ability to handle significant surge currents while maintaining low forward voltage drops, contributing to overall system efficiency.

Replacement Considerations

RB088BM-30FH is listed as a previous generation version with identical pinout and package but lower thermal ratings.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175 °C.

How is the internal circuit configured?

The device features a cathode common dual type inner circuit.

What is the typical thermal resistance from junction to case?

The thermal resistance from junction to case is 2.7 °C/W per diode.