ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 30V 5A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io) (per Diode)：5A
- Voltage - Forward (Vf) (Max) @ If：720 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：3 µA @ 30 V
- Operating Temperature - Junction：175°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：-
- Qualification：-
Download product information
Overview
The RB088BM-30FNSTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration within a TO-252 (DPAK) surface-mount package. The device supports a repetitive peak reverse voltage of 35 V and a standard reverse voltage of 30 V. It provides an average rectified forward current of 10 A per diode under specified thermal conditions, with a maximum peak forward surge current of 50 A. Electrical characteristics include a maximum forward voltage of 0.72 V at 5 A and a maximum reverse current of 3 μA at 30 V. The component operates with a junction temperature range up to 175 °C.
Feature Summary
- Ultra-low reverse leakage current for improved efficiency
- High reliability power mold construction
- Cathode common dual element configuration
Applications
- Switching power supplies
Procurement Notes
Verify the specific ordering suffix 'TL' corresponds to the embossed tape reel packaging format containing 2500 units per reel. Confirm that the marking code 'B088BM30' matches the physical components received. Ensure the procurement documentation references the correct datasheet revision to validate electrical parameters against the manufacturing date.
Selection Notes
Select this component for applications requiring a dual Schottky diode in a compact surface-mount form factor. The low forward voltage drop contributes to reduced power dissipation. Verify that the thermal resistance specifications align with the system's heat dissipation capabilities to maintain the junction temperature within the 175 °C limit during operation.
Part Context
This part belongs to the RB088BM series of Schottky barrier diodes from ROHM Semiconductor. The series utilizes silicon epitaxial planar technology designed for high reliability. The RB088BM-30FNS variant specifically targets general-purpose switching applications where low forward voltage and high surge current handling are required in a DPAK package.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
How is the internal circuit configured?
The device contains two elements configured as a cathode common dual type.
What is the maximum reverse current specification?
The maximum reverse current is 3 μA when measured at a reverse voltage of 30 V.
