SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RB088BM-40FHH is a silicon epitaxial planar Schottky barrier diode with an AEC-Q101 qualification. It features a cathode common dual configuration in a TO-252 (DPAK) package. Key electrical ratings include a repetitive peak reverse voltage of 45 V, a reverse voltage of 40 V, and an average rectified forward current of 10 A per diode at Tc=160°C. The peak forward surge current is 50 A. Electrical characteristics specify a maximum forward voltage of 0.77 V at 5 A and a maximum reverse current of 3 μA at 40 V. Thermal resistance from junction to case is 2.7 °C/W per diode. The device supports a maximum junction temperature of 175°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and marking codes. Confirm that the component meets all required automotive standards for the intended application environment. Ensure thermal management designs account for the specified junction-to-case thermal resistance values to prevent thermal runaway under load conditions.
Select this component for applications requiring high-reliability automotive-grade rectification with low reverse leakage. The dual cathode common configuration allows for efficient bridge or full-wave rectification within a single surface-mount footprint. Consider the 175°C maximum junction temperature capability for high-temperature operational environments.
This component belongs to the RB088 series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is designed for high-efficiency switching applications. The RB088BM-40FHH specifically utilizes a TO-252 package variant optimized for surface mount technology, providing robust thermal performance and mechanical stability for automated assembly processes.
Consult the official datasheet for confirmed substitute part numbers. Verify compatibility regarding package dimensions, pinout configuration, and electrical ratings before substitution.
The maximum junction temperature is 175°C.
The device features a cathode common dual type inner circuit.
The maximum reverse current is 3 μA when measured at a reverse voltage of 40 V.