RB088BM-40FHTL

Overview

The RB088BM-40FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for surface-mount applications in the TO-252-3 (DPAK) package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 40 V and an average rectified forward current of 10 A. The device exhibits a maximum forward voltage of 770 mV at 5 A and a maximum reverse leakage current of 3 µA at 40 V. It supports a forward surge current of 50 A and operates at junction temperatures up to 150 °C. This component holds AEC-Q101 qualification for automotive reliability standards.

Feature Summary

• Utilizes blocking metal technology to achieve super low reverse leakage current characteristics suitable for high-temperature environments.
• Provides enhanced thermal stability and resistance to thermal runaway compared to general-purpose Schottky diodes.
• Features a robust surface-mount DPAK package design optimized for efficient heat dissipation in compact circuits.

Applications

• Switching power supply circuits requiring high efficiency and low loss.
• Automotive electronic systems demanding AEC-Q101 qualified components.
• Industrial equipment operating in elevated temperature environments.

Procurement Notes

Verify the specific ordering suffix FHTL against the manufacturer's latest documentation to ensure correct packaging and tape specifications. Confirm that the component status remains acceptable for your design timeline, as this part may be subject to production lifecycle changes. Cross-reference the datasheet revision date to validate all electrical parameters before finalizing procurement orders.

Selection Notes

Select this component when a dual common cathode Schottky diode is required in a TO-252 package with a 40 V rating. Ensure the application current does not exceed the 10 A average rectified limit and verify thermal management capabilities for the 150 °C junction temperature. Consider the low reverse leakage特性 if the circuit operates in high ambient temperatures where standard Schottky diodes might fail due to thermal instability.

Part Context

This device belongs to the RB088 series of super low IR Schottky barrier diodes developed by ROHM Semiconductor. The series is engineered to address the thermal instability issues often associated with high-voltage Schottky diodes. By incorporating advanced blocking metal structures, the RB088 series maintains low leakage currents even at high temperatures, making it distinct from standard silicon rectifiers or conventional Schottky devices in automotive and industrial power applications.

Replacement Considerations

The RB088BM-40FHHTL is documented as a recommended replacement with the same pinout and package. Verify compatibility with the newer variant before substituting, as it offers updated supply status while maintaining identical electrical and mechanical specifications for existing designs.