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The RB088BM-40FNSTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration housed in a TO-252 (D-Pak) surface-mount package. The device supports a repetitive peak reverse voltage of 45V and a continuous average rectified forward current of 10A per diode. Key electrical characteristics include a maximum forward voltage of 0.77V at 5A and an ultra-low reverse current of 3μA at 40V. It operates with a junction temperature range up to 175°C.
Verify the specific ordering suffix 'TL' against the manufacturer's latest documentation to confirm taping specifications and reel dimensions. Ensure that the component selection aligns with standard electronic equipment requirements, as automotive or medical applications require separate qualification data not included in this general-purpose datasheet.
Select this component for designs requiring high surge current handling and low forward voltage drop in compact surface-mount layouts. Evaluate thermal resistance parameters to ensure adequate heat dissipation on the PCB footprint. Confirm that the operating environment remains within specified temperature limits to prevent thermal runaway.
This part belongs to the RB088BM series of ultra-low IR Schottky barrier diodes from ROHM. These devices utilize silicon epitaxial planar technology to achieve superior switching performance compared to standard rectifiers. The series is designed specifically for efficiency improvements in modern power conversion circuits.
Consult the manufacturer's official replacement guide for equivalent parts with identical pinouts and packages if this specific ordering code is unavailable.
The maximum junction temperature is 175°C.
The device features a cathode common dual type inner circuit.
The peak forward surge current is rated at 50A per diode under non-repetitive conditions.