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The RB088BM-60TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-252-3 (DPAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 60V and an average forward current of 10A. Key electrical parameters include a maximum forward voltage of 0.83V at 5A, a maximum reverse current of 3µA, and a non-repetitive peak forward surge current of 50A. It operates at junction temperatures up to 175°C.
Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets AEC-Q101 requirements if used in automotive applications. Check for any discontinuance notifications or lifecycle changes before finalizing procurement plans.
Select this component for designs requiring high current handling in a compact surface-mount footprint. The low forward voltage drop aids in reducing conduction losses. Ensure the circuit design accommodates the 175°C maximum junction temperature rating for robust thermal performance.
This part belongs to the RB088 series of super low IR Schottky barrier diodes designed specifically for automotive applications. The series offers various voltage ratings and configurations to support diverse power management needs within vehicle electronic systems.
RB088BM-60FHH is listed as a similar level replacement with the same pinout and package.