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The RB088BM100FHHTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration housed in a TO-252 (DPAK) surface-mount package. The device is qualified under the AEC-Q101 automotive standard and supports a maximum repetitive peak reverse voltage of 110 V with a rated reverse voltage of 100 V. It provides an average rectified forward current of 10 A per diode and withstands a peak forward surge current of 50 A. The component operates within a junction temperature range up to 175 °C.
Verify the specific ordering suffix against official documentation to confirm packaging details, as variations exist between tape-and-reel formats. Confirm that the component meets all required environmental and thermal specifications for the intended application before finalizing procurement decisions.
Select this component for designs requiring high junction temperature tolerance and low reverse leakage in a compact surface-mount form factor. Ensure adequate board-level thermal management is implemented to maintain the junction temperature within the specified maximum limits during operation.
This part belongs to the RB088 series of Schottky barrier diodes from ROHM Semiconductor. The series includes various voltage ratings and package options designed for efficient power conversion. The RB088BM100FHHTL specifically utilizes the TO-252 package variant within this product family.
The datasheet identifies RB088BM100FHTL as a similar level replacement with the same pinout and package. Verify compatibility with existing PCB footprints and thermal requirements when substituting components.
The maximum operating junction temperature is 175 °C.
Yes, the RB088BM100FHHTL is qualified according to the AEC-Q101 standard.
The device features a cathode common dual type inner circuit configuration.