RB088BM150FHTL

RB088BM150FHTL

$1.52
  • Description:DIODE ARR SCHOTT 150V 10A TO-252
  • Series:-

SKU:6e6ae404f3d9 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARR SCHOTT 150V 10A TO-252
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):10.7 ns
  • Current - Reverse Leakage @ Vr:15 µA @ 150 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252
  • Grade:Automotive
  • Qualification:AEC-Q101

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RB088BM150FHTL

Overview

The RB088BM150FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 150 V and an average forward rectified current of 10 A per element. The device exhibits a maximum forward voltage of 780 mV at 5 A and a low reverse leakage current of 15 uA. It supports a non-repetitive peak forward surge current of 50 A and operates at junction temperatures up to +150 °C. This component holds AEC-Q101 automotive qualification.

Feature Summary

  • Dual anode common cathode configuration for efficient bridge rectification or synchronous rectification applications
  • Automotive-grade reliability certified under the AEC-Q101 standard
  • Low forward voltage drop characteristics to minimize conduction losses
  • Ultra-low reverse leakage current to enhance efficiency in high-temperature environments

Applications

  • Automotive switching power supplies
  • General-purpose rectification circuits
  • High-efficiency DC-DC converters

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging format, as variations exist between tape-and-reel and cut-tape options. Confirm that the design intent aligns with the Not Recommended for New Design status if applicable to long-term supply planning. Cross-reference the exact electrical parameters against the official datasheet to ensure compatibility with system voltage and current requirements before finalizing procurement.

Selection Notes

Select this component when a dual-diode arrangement is required in a compact surface-mount footprint. The TO-252 package provides robust thermal performance suitable for moderate power levels. Ensure the application voltage does not exceed the 150 V rating and that the thermal management strategy supports operation up to the 150 °C junction temperature limit. Verify that the 10 A current rating meets the continuous load requirements of the circuit design.

Part Context

This part belongs to the RB088B series of Schottky barrier diodes from ROHM Semiconductor. The series includes variants with different voltage ratings and packaging options, such as the RB088BM100FHTL and RB088BGE150TL. The RB088BM150FHTL specifically targets automotive and industrial applications requiring high reliability and low forward voltage in a DPAK form factor.

Replacement Considerations

The RB088BM150FH is listed as a similar level replacement with the same pinout and package. Other variants in the RB088B series may serve as alternatives if voltage or current ratings differ slightly, but direct substitution requires verification of electrical specifications and thermal characteristics.

RB088BM150FHTLRB088BM150FHTL
$1.52
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