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Product Detailed Parameters
- Description：DIODE ARRAY SCHOT 200V 5A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：5A
- Voltage - Forward (Vf) (Max) @ If：880 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：7 µA @ 200 V
- Operating Temperature - Junction：175°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RB088BM200FHHTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration housed in a TO-252 surface-mount package. The device supports a repetitive peak reverse voltage of 200 V and an average rectified forward current of 10 A per diode. Key electrical parameters include a maximum forward voltage of 0.88 V at 5 A, a maximum reverse current of 7 μA at 200 V, and a peak forward surge current of 100 A. It operates with a junction temperature up to 175 °C and is qualified under the AEC-Q101 automotive standard.
Feature Summary
- High reliability power mold type construction
- Ultra-low reverse leakage current characteristics
- Cathode common dual element configuration
- AEC-Q101 qualified for automotive applications
Applications
- Switching power supplies
- Automotive electronic circuits
- Industrial equipment power management
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental and thermal specifications for the target application before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring high-reliability automotive-grade rectification. Ensure board design accommodates the specified thermal resistance values to prevent thermal runaway. Verify compatibility with the TO-252 footprint and taping specifications during the layout phase.
Part Context
This part belongs to the RB088 series of ultra-low IR Schottky barrier diodes designed for high-temperature environments. The series utilizes blocking metal technology to improve reverse current stability compared to general FRD products. It serves as a replacement for conventional rectifiers in applications demanding superior efficiency and thermal performance.
Replacement Considerations
Consult official datasheets for direct pin-compatible alternatives within the same series. Verify that any substitute maintains the required AEC-Q101 qualification and thermal characteristics.
FAQ
What is the maximum junction temperature for this component?
The maximum operating junction temperature is 175 °C.
How is the internal circuit configured?
The device features a cathode common dual type configuration.
Is this component suitable for automotive use?
Yes, it is qualified according to the AEC-Q101 standard for automotive applications.
