RB088NS-30FHTL

Overview

The RB088NS-30FHTL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications including switching power supplies and automotive electronics. It features a dual anode common cathode configuration within a TO-263S (D2PAK) surface-mount package. The device supports an average rectified forward current of 10 A and withstands a repetitive reverse voltage of 35 V with a rated reverse voltage of 30 V. Key electrical characteristics include a maximum forward voltage of 0.72 V at 5 A and a maximum reverse current of 3 µA at 30 V. It offers a forward surge current capability of 50 A and operates at junction temperatures up to +150 °C. The component complies with the AEC-Q101 automotive grade standard.

Feature Summary

• Utilizes blocking metal technology to achieve ultra-low reverse leakage current, enhancing thermal stability in high-temperature environments.
• Certified to AEC-Q101 standards, ensuring suitability for demanding automotive electronic systems.
• Provides low forward voltage drop characteristics to support efficient power conversion and reduced energy loss.

Applications

• Automotive switching power supply circuits
• High-reliability industrial power equipment
• General-purpose rectification in DC-DC converters

Procurement Notes

Verify the specific suffix 'TL' indicates tape-and-reel packaging when sourcing. Confirm that the part meets AEC-Q101 requirements if used in automotive designs. Check for any obsolescence notices or recommended new designations from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for applications requiring robust performance under elevated temperatures where standard Schottky diodes might suffer from thermal runaway due to leakage current increases. The TO-263S package provides adequate thermal dissipation for 10 A continuous operation. Ensure the circuit design accounts for the 30 V reverse voltage rating to prevent breakdown.

Part Context

This component belongs to the RBxx8 series of Schottky barrier diodes developed by ROHM Semiconductor. The series is engineered to address the limitations of conventional Schottky devices in high-temperature scenarios by significantly improving reverse leakage characteristics. This allows for safer replacement of Fast Recovery Diodes (FRDs) in various power management applications.

Replacement Considerations

The RB088NS-30FH is listed as a similar level replacement with the same pinout and package. Verify compatibility regarding the maximum junction temperature and specific electrical tolerances before substitution.