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The RB088NS-60FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. The device supports an average rectified forward current of 10 A and withstands a reverse voltage of 60 V with a maximum repetitive peak reverse voltage of 60 V. Key electrical parameters include a maximum forward voltage of 0.83 V at 5 A and a maximum reverse current of 3 mA at 60 V. It operates within a junction temperature range up to +150°C and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix FHTL against official ROHM documentation to confirm tape-and-reel packaging and quantity specifications. Ensure the component matches the required AEC-Q101 automotive grade certification for your application environment. Cross-reference the TO-263S package dimensions with your PCB footprint requirements before finalizing procurement decisions.
Select this component when a dual common cathode Schottky diode is required for automotive or industrial switching power supplies. The TO-263S package provides robust thermal performance for 10 A continuous current applications. Consider the 60 V rating and low forward voltage drop for efficiency optimization in low-voltage DC-DC conversion stages requiring high reliability.
This part belongs to the RB088 series of Schottky barrier diodes from ROHM Semiconductor. The series includes various voltage ratings and packages tailored for automotive and general-purpose electronics. The NS variant specifically denotes the dual common cathode configuration in a D2PAK-style package, distinguishing it from single-diode or different package options within the broader product line.
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with alternative dual common cathode Schottky diodes based on matching current, voltage, and package specifications.