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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 100V 10A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：870 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：11.8 ns
- Current - Reverse Leakage @ Vr：5 µA @ 100 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RB088NS100FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with two elements. Key electrical parameters include a maximum repetitive reverse voltage of 110 V and an average rectified forward current of 10 A. The device exhibits a maximum forward voltage of 870 mV at 5 A and a maximum reverse current of 5 µA at 100 V. It supports a non-repetitive peak forward surge current of 100 A and operates at junction temperatures up to +150 °C. This component holds AEC-Q101 qualification for automotive reliability.
Feature Summary
- Dual anode common cathode configuration for efficient circuit design
- AEC-Q101 qualified for high-reliability automotive applications
- Utilizes blocking metal technology to suppress reverse leakage current
- Optimized for low power consumption through reduced forward voltage
Applications
- Automotive switching power supply circuits
- High-temperature industrial equipment rectification
- Replacement for standard FRDs in efficiency-critical designs
Procurement Notes
Verify the specific suffix FHTL against official datasheets to confirm tape-and-reel packaging and AEC-Q101 automotive grade status. Ensure the ordering part number matches the required voltage rating of 100 V/110 V RRM. Confirm RoHS compliance and lead times directly with authorized distributors or the manufacturer, as availability varies by region.
Selection Notes
Select this component when a dual-diode arrangement in a D2PAK package is required for automotive-grade reliability. It serves as a direct replacement for general-purpose Schottky diodes where lower forward voltage and superior high-temperature stability are necessary. Consider the 10 A current rating and thermal management requirements of the TO-263S package during PCB layout.
Part Context
This part belongs to the RBxx8 series of ultra-low reverse leakage current Schottky barrier diodes designed by ROHM. The series addresses thermal runaway risks in high-temperature environments by employing specialized blocking metal structures. The RB088NS variant specifically targets applications requiring dual configurations within a single surface-mount footprint.
Replacement Considerations
The alias RB088NS100FH denotes the same device without the reel specification. For alternative packages, consider the RB088BM100FHTL in TO-252. Verify pinout compatibility before substituting with other manufacturers' dual Schottky diodes rated for 100 V and 10 A.
